TIC236 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – SILICON TRIACS

TIC236 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
I_H
I_L
dv/dt
Holding current
Latching current
Critical rate of rise of
off-state voltage
V_supply = +12 V†
V_supply = -12 V†
V_supply = +12 V†
V_supply = -12 V†
V_D = Rated V_D
I_G = 0
I_G = 0
(see Note 5)
I_G = 0
Init’ I_TM = 100 mA
Init’ I_TM = -100 mA
T_C = 110°C
22
40
-12 -40
80
-80
±400
mA
mA
V/µs
dv/dt_(c)
di/dt
Critical rise of
commutation voltage
Critical rate of rise of
on -state current
V_D = Rated V_D
di/dt = 0.5 I_T(RMS)/ms
V_D = Rated V_D
di_G/dt = 50 mA/µs
I_GT = 50 mA
T_C = 80°C
I_T = 1.4 I_T(RMS)
T_C = 110°C
±1.2 ±9
±100
V/µs
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R_G = 100 Ω, t_p(g) = 20 µs, t_r = ≤ 15 ns, f = 1 kHz.
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2
°C/W
62.5 °C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
1000
CASE TEMPERATURE
TC08AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC08AB
10
100
10
1
1
V_supply I_GTM
++
+-
V_AA = ± 12 V
R_L = 10 Ω
--
-+
t_p(g) = 20 µs
0·1
-60 -40 -20 0 20 40 60 80 100 120
T_C - Case Temperature - °C
Figure 1.
2
0·1
-60
V_supply I_GTM
} ^{+ +}
+-
--
-+
V_AA = ± 12 V
R_L = 10 Ω
t_p(g) = 20 µs
-40 -20 0 20 40 60 80 100 120
T_C - Case Temperature - °C
Figure 2.
PRODUCT INFORMATION
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.