TIC236 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – SILICON TRIACS

TIC236 SERIES
SILICON TRIACS
High Current Triacs
12 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I_GT of 50 mA (Quadrants 1 - 3)
This series is currently available,
but not recommended for new
designs.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC236D
Repetitive peak off-state voltage (see Note 1)
TIC236M
TIC236S
TIC236N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
V_DRM
I_T(RMS)
I_TSM
I_GM
T_C
T_stg
T_L
VALUE
400
600
700
800
12
100
±1
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 300 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted )
I_DRM
PARAMETER
Repetitive peak
off-state current
I_GT
Gate trigger
current
V_GT
Gate trigger
voltage
V_T
On-state voltage
V_D = Rated V_DRM
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
I_TM = ±17 A
TEST CONDITIONS
I_G = 0
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
I_G = 50 mA
T_C = 110°C
t_p(g) > 20 μs
t_p(g) > 20 μs
t_p(g) > 20 μs
t_p(g) > 20 μs
t_p(g) > 20 μs
t_p(g) > 20 μs
t_p(g) > 20 μs
t_p(g) > 20 μs
(see Note 4)
MIN TYP MAX UNIT
±2
mA
12
50
-19 -50
-16 -50
mA
34
0.8
2
-0.8
-2
-0.8
-2
V
0.9
2
±1.4 ±2.1
V
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t_p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1