AT-31011 Datasheet, PDF (4/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-31011, AT-31033 Typical Performance
15
20
20
12
16
16
10 mA
9
5 mA
12
12
6
2 mA
3
2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 8. AT-31011 and AT-31033 Power at 1 dB Gain
Compression vs. Frequency and Current at V_ce = 5 V.
AT-31011 fig 8
8
2 mA
4
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 9. AT-31011 1 dB Compressed Gain vs. Frequen-
cy and Current at V_ce = 5 V.
AT-31011 fig 9
8
2 mA
4
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 10. AT-31033 1 dB Compressed Gain vs. Fre-
quency and Current at V_ce = 5 V.
AT-31011 fig 10
4
5 mA
2
0
2 mA
-2
-4
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 11. AT-31011 and AT-31033 Power at 1 dB Gain
Compression vs. Frequency and Current at V_ce = 1 V.
AT-31011 fig 11
20
16
5 mA
12
2 mA
8
4
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 12. AT-31011 1 dB Compressed Gain vs. Fre-
quency and Current at V_ce = 1 V.
AT-31011 fig 12
20
16
5 mA
12
8
2 mA
4
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 13. AT-31033 1 dB Compressed Gain vs. Fre-
quency and Current at V_ce = 1 V.
AT-31011 fig 13
25
20
Ga
15
10
NF
5
2.5
25
2.0
20
1.5
15
1.0
10
0.5
5
2.5
2.0
1.5
Ga
1.0
NF
0.5
0
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
-20
-40
-60
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 14. AT-31011 Noise Figure and Associated Gain
at V_ce = 2.7 V, I_c = 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit LoAsTs-e3s1011 fig 14
De-embedded)
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 15. AT-31033 Noise Figure and Associated Gain
at V_ce = 2.7 V, I_c = 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Lo_Ass_Te_-s_{31011 fig 15}
De-embedded)
-80
-9 -6
-3
0
3
6
POWER PER TONE (dBm)
Figure 16. AT-31011 and AT-31033 Intermodulation
Products vs. Output Power at V_ce = 2.7 V, I_c = 10 mA,
900 MHz with OptimATa-l3T1u0n1in1gf.ig 16