AT-31011 Datasheet, PDF (3/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

Characterization Information, T_A = 25°C

Symbol Parameters and Test Conditions Units
P_1dB

G_1dB

IP₃

|S₂₁|_E2
C_CB
Power at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 10 mA
Gain at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 10 mA
Output Third Order Intercept Point,
V_CE = 2.7 V, I_C = 10 mA (opt tuning)
Gain in 50 Ω System; V_CE = 2.7 V, I_C = 1 mA
Collector-Base Capacitance
f = 0.9 GHz dBm
f = 0.9 GHz dB
f = 0.9 GHz
f = 0.9 GHz
V_CB = 3V, f = 1 MHz
dBm
dB
pF
AT-31011
Typ
9
15
20
10
0.04
AT-31033
Typ
9
13
20
9
0.04
2.5
AMPLIFIER NF
2
1.5
1
NF MIN.
0.5
1 mA
10 mA
0
0 0.5
1
1.5
2
2.5
FREQUENCY (GHz)
Figure 2. AT-31011 and AT-31033 Minimum Noise
Figure and Amplifier NF^[1] vs. Frequency and Current
at V_ce = 2.7 V. AT-31011 fig 2
25
20
10 mA
15
1 mA
10
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 3. AT-31011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V_ce = 2.7 V.
AT-31011 fig 3
25
20
10 mA
15
10
1 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 4. AT-31033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V_ce = 2.7 V.
AT-31011 fig 4
10
10 mA
8
5 mA
6
4
2 mA
2
2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
20
16
12
8
2 mA
4
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
16
12
8
4
2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-31011 and AT-31033 Power at 1 dB Gain
Compression vs. Frequency and Current at V_ce = 2.7 V.
AT-31011 fig 5
Figure 6. AT-31011 1 dB Compressed Gain vs. Frequen-
cy and Current at V_ce = 2.7 V.
AT-31011 fig 6
Figure 7. AT-31033 1 dB Compressed Gain vs. Frequen-
cy and Current at V_ce = 2.7 V.
AT-31011 fig 7
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and including
circuit losses.