DEMO-ATF-5X1P8 Datasheet, PDF (3/23 Pages) Broadcom Corporation. – High Linearity Enhancement Mode[ Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package

ATF-521P8 Electrical Specifications
T_A = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min. Typ.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 200 mA
Vth
Threshold Voltage
Vds = 4.5V, Ids = 16 mA
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
Gm
Transconductance


Vds = 4.5V, Gm = ∆Idss/∆Vgs;
Vgs = Vgs1 - Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
NF
Noise Figure ^[1]

f = 2 GHz
f = 900 MHz
G
Gain^[1]

f = 2 GHz
f = 900 MHz
OIP3
Output 3^rd Order
Intercept Point^[1]
f = 2 GHz
f = 900 MHz
P1dB
Output 1dB
Compressed^[1]
f = 2 GHz
f = 900 MHz
PAE
Power Added Efficiency

f = 2 GHz
f = 900 MHz
ACLR
Adjacent Channel Leakage
Power Ratio^[1,2]
Offset BW = 5 MHz
Offset BW = 10 MHz
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
V
—
V
—
µA
—
mmho —
0.62
0.28
14.8
1300
µA -20
0.49
dB ­
—
1.5
dB
—
1.2
dB
15.5
17
dB
—
17.2
dBm
38.5
42
dBm
—
42.5
dBm
25
26.5
dBm
—
26.5
%
45
60
%
—
56
dBc
— -51.4
dBc
— -61.5
Max.
—
—
—
—
—
—
—
18.5
—
—
—
—
—
—
—
—
—
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.55
Γ_ang = -166°
(1.1 dB loss)
Output
Matching Circuit
DUT
Γ_mag = 0.35
Γ_ang = 168°
(0.9 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-
off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.