DEMO-MGA-412P8 Datasheet, PDF (2/8 Pages) Broadcom Corporation. – GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications

Absolute Maximum Rating ^[1] Tc=25°C
Symbol
V_dd
P_in
P_diss
T_j
T_STG
Parameter
Device Voltage, RF output to ground
CW RF Input Power (Vdd = 3.3V)
Total Power Dissipation ^[2]
Junction Temperature
Storage Temperature
Units Absolute Max.
V
5
dBm 10
W
0.8
o_C
150
o_C
-65 to 150
Thermal Resistance ^[3]
(Vdd = 3.3V), θjc = 33.3 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Board (package belly) temperature, Tb is 25 °C.
Derate 30mW/ °C for Tb>123.36 °C.
3. Thermal resistance measured using 150 °C
Liquid Crystal Measurement Technique.
Product Consistency Distribution Charts ^[4,5]
USL
LSL
30
35
40
45
50 55
Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA
24 24.2 24.6 25 25.2 25.6 26
Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dBm
LSL
23
24
25
26
27
28
Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB
Notes:
4. Distribution data sample size is 500 samples taken from 3 different
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
5. Measurements are made on production test board, which represents
a trade-off between optimal Gain and P1dB. Circuit losses have been
de-embedded from actual measurements.