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DEMO-MGA-412P8 Datasheet, PDF (1/8 Pages) Broadcom Corporation. – GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
MGA-412P8
GaAs Enhancement-mode pHEMT Power Amplifier
optimized for IEEE 802.11b/g applications
Data Sheet
Description
Avago Technologies’s MGA-412P8 linear power am-
plifier is designed for applications in the (1.7-3) GHz
frequency range. The amplifier is optimized for IEEE
802.11b/g WLAN applications and has a best-in-class
efficiency (PAE) of 25.5% (54Mbps OFDM) achieved
through the use of Avago Technologies’ proprietary
GaAs Enhancement-mode pHEMT process.
The MGA-412P8 is housed in a miniature 2.0 x 2.0 x
0.75mm3 8-lead leadless-plastic-chip-carrier (LPCC)
package. The compact footprint, low profile and excellent
thermal efficiency of the LPCC package makes the MGA-
412P8 an ideal choice as a power amplifier for mobile IEEE
802.11b/g WLAN applications.
It achieves +19.0 dBm linear output power that meets 3%
EVM at 54Mbps data rate (OFDM Modulation), and 23dBm
at 11Mbps (CCCK modulation).
Component Image
2.0 x 2.0 x 0.75 mm
8-lead LPCC
Pin 8
Pin 1
Pin 7
Pin 2
Pin 6
Pin 3
Pin 5
Pin 4
Bottom View
1:Gnd
2:RFin
2:Gnd
4:Vdd1
1CX
8:Det
7:RFout
6:Vdd2
5:Pwr Down
Top View
Note:
Package marking provides Orientation and Identification
"1C" = Product Code
"X" = Date code indicates month of manufacture
Features
• Advanced GaAs E-pHEMT
• Integrated power detector & power down functions
• High efficiency
• Single +3.3V Supply
• Small Footprint: 2x2mm2
• Low Profile: 0.8mm max.
Specifications
• At 2.452 GHz; 3.3V (Typ.) :
• Gain: 25.5 dB
• P1dB: 25.3 dBm
• Pout linear with IEEE 802.11g OFDM modulation
@54Mbps data rate: 19.0 dBm @ 3% EVM.
• Current @19dBm linear Pout: (54Mbps) : 95mA
• Reverse Isolation (typ): > 40dB
• Quiescent current (typ): 40mA
• Meets IEEE 802.11b @11Mbps (CCCK modulation)
with Pout: 23dBm while consuming 200mA.
Applications
• Power Amplifier for IEEE 802.11b/g WLAN applica-
tions
• Bluetooth Power Amplifier
• 2.4GHz ISM band applications
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Technologies Application
Note A004R: Electrostatic Discharge,
Damage and Control.