DEMO-MGA-30X16B Datasheet, PDF (2/17 Pages) Broadcom Corporation. – 150MHz – 1GHz ½ Watt High Linearity Amplifi er

Absolute Maximum Rating ^[1] T_A=25C
Symbol
V_dd,max
I_ds,max
V_ctrl,max
P_in,max
P_diss
T_{j, max}
T_STG
Parameter
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
CW RF Input Power
Total Power Dissipation ^[3]
Junction Temperature
Storage Temperature
Units
Absolute Max.
V
5.5
mA
400
V
5.5
dBm
22
W
2.2
C
150
C
-65 to 150
Thermal Resistance ^[2] _jc = 33 C/W (Vdd=5, Ids=200mA, Tc=85C)
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red measurement technique.
3. This is limited by maximum Vdd and Ids. Derate 30.3mW/ C for Tc> 77.5 C.
Electrical Specifications ^[4]
T_A = 25C, Vdd =5V, Vctrl =5V, RF performance at 900 MHz, measured on demo board (see Fig. 7) unless otherwise
specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Ids
Quiescent current
mA
165
202.8
240
Ictrl
Vctrl current
mA
-
7
-
Gain
Gain
dB
15.5
17.0
18.5
OIP3 ^[5]
Output Third Order Intercept Point
dBm
41
44.1
-
OP1dB
Output Power at 1dB Gain Compression
dBm
26.2
27.7
-
PAE
Power Added Efficiency
%
-
47.0
-
NF
Noise Figure
dB
-
2.0
-
S11
Input Return Loss, 50Ω source
dB
-
-14
-
S22
Output Return Loss, 50Ω load
dB
-
-14
-
S12
Reverse Isolation
dB
-
-23.5
-
Notes:
4. Measurements at 900MHz obtained using demo board described in Figure 6 and 7.
5. 900 MHz OIP3 test condition: F_RF1 - F_RF2 = 10MHz with input power of -5dBm per tone measured at worse side band
6. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note (if applicable) for more details.
2