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DEMO-MGA-30X16B Datasheet, PDF (1/17 Pages) Broadcom Corporation. – 150MHz – 1GHz ½ Watt High Linearity Amplifi er | |||
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MGA-30116
150MHz â 1GHz
½ Watt High Linearity Amplifier
Data Sheet
Description
Avago Technologiesâ MGA-30116 is a high linearity ½ Watt
PA with good OIP3 performance and exceptionally good
PAE at p1dB gain compression point, achieved through
the use of Avago Technologiesâ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The adjustable temperature compensated internal bias
circuit allowed the device to be operated at either class A
or class AB operation
The MGA-30116 is housed inside a standard 16 pin QFN
3X3 package.
Applications
ï· Class A driver amplifier for GSM/CDMA Base Stations.
ï· General purpose gain block.
Component Image
16 pins QFN 3x3
30116
YYWW
XXXX
NC 12
VDD/RFout 11
GND
VDD/RFout 10
NC 9
1 Vm
2 Vbias
3 RF in
4 NC
Features
ï· High linearity and P1dB
ï· Built in adjustable temperature compensated internal
bias circuitry
ï· GaAs E-pHEMT Technology [1]
ï· Standard QFN 3X3 package
ï· 5V supply
ï· Excellent uniformity in product specifications
ï· Tape-and-Reel packaging option available
ï· MSL-1 and Lead-free
ï· High MTTF for base station application
Specifications
900MHz; 5V, 202.8mA (typical)
ï· 17.0 dB Gain
ï· 44.1 dBm Output IP3
ï· 27.7 dBm Output Power at 1dB gain compression
ï· 47.0% PAE at P1dB
ï· 2.0 dB Noise Figure
Notes:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
nc = not connected
TOP VIEW
BOTTOM VIEW
Notes:
Package marking provides orientation and identification
â30116â = Device Part Number
âYYWWâ = Work Week and Year of manufacture
âXXXXâ = Last 4 digit of Lot number
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
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