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| SD106WS_13 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Diode | |||
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Production specification
Silicon Epitaxial Planar Diode
SD106WS
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VR
VF
IR
CT
Min.
30
Typ.
260
320
420
490
Max. Unit
V
mV
550
5
μA
15 pF
Conditions
IR=100μA
IF=2mA
IF=15mA
IF=100mA
IF=200mA
VR=30V
VR=10V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
B026
Rev.A
www.gmicroelec.com
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