SD106WS_13 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Diode

Production specification
Silicon Epitaxial Planar Diode
FEATURES
z Low turn-on voltage
z Fast switching
Pb
Lead-free
z This device is protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharge
z Ideal for precaution of MOS device ,steering ,biasing ,
and coupling diodes for fast switching and
low logic level application
z Microminiature plastic package
SD106WS
SOD-323
APPLICATIONS
z High speed switching
ORDERING INFORMATION
Type No.
Marking
SD106WS
S21
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Non-Repetitive Peak reverse voltage
V_RM
30
Peak forward Current
I_FM
200
Forward surge current
@t_p=10ms _IFSM
1
Power dissipation
P_tot
250
Thermal resistance junction to ambient air _RθjA
500
Junction temperature
Storage temperature
T_j
T_STG
150
-65 to +150
Unit
V
mA
A
mW
℃/W
℃
℃
B026
Rev.A
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