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| S9016_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
S9016
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
30
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
20
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
4
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=3V,IC=0
V
V
0.1 μA
0.1 μA
DC current gain
hFE
VCE=5V,IC=1mA
28 90 198
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB= 1mA
0.1 0.3 V
Base-emitter on voltage
VBE(on)
VCE=5V, IC=1mA
0.72
V
Transition frequency
fT
VCE=5V, IC= 1mA
400 620
MHz
Output capacitance
VCB=10V,
Cob
IE=0,f=1MHz
1.2 1.6 pF
Noise figure
VCE=5V,IC=1.0,
NF
f=100MHz,RS=50â¦
1.2 1.6 pF
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
C127
Rev.A
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