S9016_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(I_C= 25mA）
z Power dissipation.(P_C=200mW)
APPLICATIONS
Pb
Lead-free
z AM converter, FM/RM amplifier of low noise.
Production specification
S9016
ORDERING INFORMATION
Type No.
Marking
S9016
Y6
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
20
Units
V
V
V_EBO
Emitter-Base Voltage
4
V
I_C
Collector Current -Continuous
25
mA
P_C
Collector Dissipation
200
mW
T_j,T_stg
Junction and Storage Temperature
-55 to +150
℃
C127
Rev.A
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