MUR170 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

RATINGS AND CHARACTERISTIC CURVES
MUR170 --- MUR1100
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUTIMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
10
1.0
TJ=25
Pulse Width=300µS
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT Z
50
40
30
20
10
0
1
TJ=125
8.3ms Single Half
Sine-Wave
5
10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
1
0.1 0.2 0.4 1 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
Document Number 0262021
BLGALAXY ELECTRICAL
www.galaxycn.com
2.