MUR170 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

BL^{GALAXY ELECTRICAL}
MUR170 --- MUR1100
HIGH EFFICIENCY RECT IFIER
VOLTAGE RANGE: 700---1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-41, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces , 0.34gram s
Mounting: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR170 MUR180 MUR190 MUR1100 UNITS
Maximum recurrent peak reverse voltage
V_RRM
Maximum RMS voltage
V _{R MS}
Maximum DC blocking voltage
V_DC
Maximum average forw ard rectif ied current
9.5mm lead length, @T_A=75
I_{F (AV)}
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@ T_J =125
Maximum instantaneous f orw ard voltage
@ 1.0A
I_{F SM}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
C_J
R_θJA
T_J
Storage temperature range
T_STG
N OTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
700
490
700
800
900
560
630
800
900
1.0
30.0
1.7
10.0
100.0
75
15
60
- 55 ----- + 150
- 55 ----- + 150
1000
V
700
V
1000
V
A
A
V
A
ns
pF
/W
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Document Number 0262021
BLGALAXY ELECTRICAL
1.