 English |
|
|
|
|
|
|
|
| MMBTA63_14 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Darlington Amplifier Transistor | |||
| |||
| ◁ |
Production specification
PNP Darlington Amplifier Transistor MMBTA63/MMBTA64
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO
Collector-base breakdown voltage
MMBTA63
MMBTA64
IC=-100μA,IE=0
-30
-
V
-30
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Collector-emitter breakdown voltage
MMBTA63 IC=-0.1mA,IB=0
MMBTA64
Emitter-base breakdown voltage
IE=-100μA,IC=0
collector cut-off current
IE = 0; VCB = -30V
collector cut-off current
IE = 0; VCE = -10V
Emitter cut-off current
IC= 0; VEB = -10V
-30
-
V
-30
-10
-
V
-
-0.1 μA
-
-0.1 μA
-
-0.1 μA
DC current gain
MMBTA63 VCE = -5V; IC= -10mA
5000
hFE
MMBTA64 VCE = -5V;IC = -10mA
10000
-
MMBTA63 VCE = -5V;IC = -100mA 10000
MMBTA64 VCE = -5V;IC =-100mA 20000
VCE(sat)
collector-emitter saturation voltage IC = -100mA; IB =-0.1mA -
VBE(on)
fT
base-emitter on voltage
transition frequency
IC = -100mA; VCE=-5.0V
-
IC =-10mA; VCE =-5.0V;
125
f =100MHz
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
-1.5 V
-2.0 V
- MHz
C124
Rev.A
www.gmicroelec.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese