MMBTA63_14 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Darlington Amplifier Transistor

Production specification
PNP Darlington Amplifier Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBTA13/MMBTA14).
z High current gain.
Pb
Lead-free
MMBTA63/MMBTA64
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMBTA63
2U
MMBTA64
2V
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
V_CBO
collector-base voltage
MMBTA63
MMBTA64
V_CEO
collector-emitter voltage
MMBTA63
MMBTA64
V_EBO
emitter-base voltage
I_C
collector current (DC)
P_C
Collector dissipation
R_θJA
Thermal Resistance, Junction to Ambient
T_j ,T_stg
junction and storage temperature
Value
-30
-30
-30
-30
-10
-0.5
0.3
417
-55 to +150
UNIT
V
V
V
A
W
°C/W
°C
C124
Rev.A
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