 English |
|
|
|
|
|
|
|
| MMBT5550 Datasheet, PDF (2/4 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON | |||
| |||
| ◁ |
BL Galaxy Electrical
Production specification
NPN General Purpose Amplifier
MMBT5550
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100μA IE=0
160
Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA IB=B 0
140
Emitter-base breakdown voltage
V(BR)EBO IE=10μA IC=0
6
Collector cut-off current
ICBO
VCB=100V IE=0
Emitter cut-off current
IEBO
VEB=4V IE=0
DC current gain
hFE
VCE=5.0V IC=1.0mA
60
VCE=5.0V IC=10mA
60
VCE=5.0V IC=50mA
20
Collector-emitter saturation voltage VCE(sat) IC=10mA IB=B 1.0mA
IC=50mA IB=B 5.0mA
Base-emitter saturation voltage
VBE(sat)
IC=10mA IB=B 1.0mA
IC=50mA IB=B 5.0mA
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
MAX UNIT
V
V
V
100 nA
50 nA
250
0.15 V
0.25
1.0 V
1.2
Document number: BL/SSSTC117
Rev.A
www.galaxycn.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese