MMBT5550 Datasheet, PDF (1/4 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

BL Galaxy Electrical
NPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction.
z Ultra-small surface mount package.
Pb
Lead-free
Production specification
MMBT5550
APPLICATIONS
z High voltage transistors.
z General purpose application.
ORDERING INFORMATION
Type No.
Marking
MMBT5550
M1F
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
160
V
V_CEO
Collector-Emitter Voltage
140
V
V_EBO
I_C
Emitter-Base Voltage
Collector Current -Continuous
6
V
600
mA
P_C
Collector Dissipation
225
mW
T_j,T_stg
Junction and Storage Temperature
-55to+150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC117
Rev.A
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