English
Language : 

MMBT3904 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor
◁
BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
MMBT3904
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX.
ICBO
collector cut-off current
IE = 0; VCB = 30 V
-
50
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
-
50
hFE
DC current gain
VCE = 1 V;
IC= 0.1mA
IC = 1mA
IC = 10mA
IC = 50mA
IC = 100mA
60
-
80
-
100 300
60
-
30
-
VCEsat
collector-emitter saturation
voltage
IC = 10mA; IBB = 1mA
IC = 50mA; IBB = 5mA
-
200
-
300
VBEsat
base-emitter saturation voltage
IC = 10mA; IBB = 1mA
IC = 50mA; IBB = 5mA
650 850
-
950
Cc
collector capacitance
IE = Ie= 0; VCB= 5V;
f = 1MHz
-
4
Ce
emitter capacitance
IC = Ic = 0; VBE=500mV;
f =1MHz
-
8
fT
transition frequency
IC =10mA; VCE =20V;
f =100MHz
300
-
F
noise figure
IC=100mA; VCE =5V;
RS =1kΩ;f =10Hz to15.7kHz
-
5
Switching times (between 10% and 90% levels);
td
delay time
-
35
tr
rise time
ts
storage time
ICon=10mA; IBon =1mA;
IBoff = -1mA
-
35
-
200
tf
fall time
-
50
Note Pulse test: tp≤300 ms; d≤0.02.
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
2
 ▷