MMBT3904 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor

BL Galaxy Electrical
NPN SWITCHING TRANSISTOR
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBT3906).
z Collector Current Capability I_c=200mA.
z Collector-emitter Voltage V_CEO=40V.
Pb
Lead-free
APPLICATIONS
z General switching and amplification
ORDERING INFORMATION
Type No.
Marking
MMBT3904
1AM
Production specification
MMBT3904
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS MIN.
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
open emitter
60
open base
40
open collector 6
-
-
-
Tamb≤25°C
-
-65
T_j
junction temperature
-
T_amb
operating ambient temperature
-65
Note Transistor mounted on an FR4 printed-circuit board.
MAX.
-
-
-
200
200
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
Document number: BL/SSSTC061
Rev.A
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