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| MMBT2222 Datasheet, PDF (2/4 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR) | |||
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BL Galaxy Electrical
Production specification
NPN General Purpose Amplifier
Parameter
Symbol
Collector-base breakdown voltage V(BR)CBO
Test conditions
IC=10μA IE=0
MMBT2222
MIN TYP MAX UNIT
60
V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
IC=10mA IB=B 0
30
IE=10μA IC=0
5
VCB=50V IE=0
VCE=10V IBE(off)=0
VEB=3V IC=0
VCE=10V IC=150mA
100
VCE=10V IC=0.1mA
35
VCE=10V IC=500mA
30
IC=500mA IB=B 50mA
IC=150mA IB=B 15mA
IC=500mA IB=B 50mA
VCE=20V
f=100MHz
IC=20mA 250
Vcc=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
V
V
0.01 μA
0.1 μA
0.1 μA
300
1.6 V
0.4
2.6 V
MHz
10 ns
25 ns
225 ns
60 ns
Document number: BL/SSSTC091
Rev.A
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