MMBT2222 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

BL Galaxy Electrical
NPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction.
z Ultra-small surface mount package.
Pb
Lead-free
Production specification
MMBT2222
APPLICATIONS
z Use as a medium power amplifier.
z Switching requiring collector currents up to 500mA.
ORDERING INFORMATION
Type No.
Marking
MMBT2222
M1B
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
30
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
600
mA
P_C
Collector Dissipation
350
mW
T_j,T_stg
Junction and Storage Temperature
-55to+150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC091
Rev.A
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