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| BC856W_14 Datasheet, PDF (2/5 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Silicon Epitaxial Planar Transistor | |||
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Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown
IC=-10μA,IE=0
BC856W -80
voltage
V(BR)CBO
BC857W -50
V
BC858W -30
Collector-emitter breakdown
IC=-10mA,IB=0
BC856W
-65
voltage
V(BR)CEO
BC857W -45
V
BC858W -30
Emitter-base breakdown
voltage
V(BR)EBO IE=-1μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
-15 nA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation
voltage
VCE(sat)
Base-emitter saturation voltage VBE(sat)
Base-emitter voltage
VBE(on)
Transition frequency
fT
VEB=-5V,IC=0
VCE=-5V,IC=-10μA
BC856AW,BC857AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
VCE=-5V,IC=-2mA
BC856AW,BC857AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
IC=-10mA, IB= -0.5mA
IC=-100mA, IB= -5mA
IC=-10mA, IB= -0.5mA
IC=-100mA, IB= -5mA
IC=-2mA, VCE=5V
IC=-10mA, VCE=5V
VCE=-5V,IC=-20mA,f=100MHz
-0.1 μA
140
250
480
125 180 250
220 290 475
420 520 800
-0.075 -0.3
V
-0.25 -0.65
-0.7
V
-0.85
-0.6
-0.75
V
-0.82
250
MHz
Collector-base capacitance
Ccb
VCB=-10V,f=1MHz
35
pF
Emitter-base capacitance
Ceb
VEB=-0.5V,f=1MHz
10 15 pF
F046
Rev.A
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