BC856W_14 Datasheet, PDF (1/5 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Silicon Epitaxial Planar Transistor

Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
FEATURES
z For AF input stages and driver applications.
z High current gain.
Pb
Lead-free
z Low collector-emitter saturation voltage.
z Low noise between 30Hz and 15 kHz.
z Complementary types:BC846W,BC847W,BC848W.
APPLICATIONS
z General purpose switching and amplification application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
BC856W
BC857W
BC858W
3A/3B
3E/3F/3G
3J/3K/3L
Package Code
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
BC856W
-80
BC857W -50
BC858W -30
BC856W
-65
BC857W
-45
BC858W
-30
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-100
I_CM
Peak Collector current
-200
I_BM
Peak Base current
-200
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
mA
mA
mW
℃
F046
Rev.A
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