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| BC856W Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Transition frequency
Collector capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
CC
Test conditions
IC=-10μA,IE=0
IC=-10mA,IB=0
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
IE=-1μA,IC=0
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
VCB=-70V,IE=0
VCB=-45V,IE=0
VCB=-25V,IE=0
VCE=-60V,IB=0
VCE=-40V,IB=0
VCE=-25V,IB=0
VEB=-5V,IC=0
MIN MAX UNIT
-80
-50
V
-30
-65
-45
V
-30
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
VCE=-5V,IC=-2mA
BC856AW,BC857AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
125 250
220 475
420 800
IC=-100mA, IB= -5mA
-0.5 mV
IC=-100mA, IB= -5mA
VCE=-5V,IC=-10mA,f=100MHz
VCB=-10V,f=1MHz
-1.1 V
100
4.5
MHz
pF
Document number: BL/SSSTF046
Rev.A
www.galaxycn.com
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