BC856W Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistors

BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
FEATURES
z Ideally suited for automatic insertion.
z Power dissipation.(P_C=200mW)
Pb
Lead-free
APPLICATIONS
z General purpose switching and amplification application.
ORDERING INFORMATION
Type No.
Marking
BC856W
BC857W
BC858W
3As/3Bs
3E/3F/3G
3J/3K/3L
SOT-323
Package Code
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC856W
-80
BC857W -50
BC858W -30
BC856W
-65
BC857W
-45
BC858W
-30
-5
I_C
Collector Current -Continuous
-100
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-65~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF046
Rev.A
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