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| BAS70W Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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BL Galaxy Electrical
Production specification
Surface Mount Schottky Barrier Diode BAS70W/-04/-05/-06
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)R
IR
VF
CD
Test conditions
IR= 10μA
VR=50V
IF=1.0mA
IF=15mA
VR=0V f=1MHz
MIN MAX UNIT
70
V
100
nA
410
mV
1000
2
pF
Reverse recovery time
trr
IF=IR=10mA RL=100â¦
5
nS
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Document number: BL/SSSKF018
Rev.A
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