BAS70W Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier double diodes

BL Galaxy Electrical
Production specification
Surface Mount Schottky Barrier Diode BAS70W/-04/-05/-06
FEATURES
z Low Forward voltage drop.
z High breakdown voltage.
z Guard ring protected.
z Low capacitance.
z Very small SMD package.
Pb
Lead-free
BAS70W
BAS70-04
BAS70W-05
BAS70W-06
APPLICATIONS
z For high speed switching applications.
ORDERING INFORMATION
Type No.
Marking
BAS70W
K73
BAS70W-04
K74
BAS70W-05
K75
BAS70W-06
K76
SOT-323
Package Code
SOT-323
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Repetitive Peak reverse voltage
Working peak reverse voltage
Diode reverse voltage
V_RRM
V_RWM
V_R
Forward continuous Current
I_F
Non-Repetitive peak forward surge Current
@t=1μs
I_FS
Power Dissipation
P_d
Junction temperature
T_j
Storage temperature range
T_stg
Limits Unit
70
V
70
mA
100
mA
200
mW
150
℃
-65-+150 ℃
Document number: BL/SSSKF018
Rev.A
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