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| BAS516_14 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – High Speed Switching Diode | |||
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Production specification
High Speed Switching Diode
BAS516
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Diode capacitance
Cd
Reverse recovery time trr
Min. Max. Unit
0.715 V
0.855 V
1
V
1.25
V
30
nA
30
μA
1
μA
50
μA
1
pF
4
ns
Conditions
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=25V TJ=150â
VR=75V
VR=75V TJ=150â
VR=0,f=1MHz
IF=10mA,IR=10mA,RL=400â¦
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
H002
Rev.A
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