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BAS516_14 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – High Speed Switching Diode
Production specification
High Speed Switching Diode
FEATURES
z Ultra small plastic SMD package.
z High switching speed: max.4ns.
Pb
Lead-free
z Continuous reverse voltage: max.75V.
z Repetitive peak reverse voltage: max.85V
z Repetitive peak forward current: max.500mA
APPLICATIONS
z High-speed switching in surface mounted circuits.
ORDERING INFORMATION
Type No.
Marking
BAS516
61
BAS516
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
VRRM
85
V
Continuous reverse voltage
Continuous forward current
VR
75
V
IF
250
mA
Repetitive forward current
IFRM
500
mA
Non-repetitive peak forward surge current
t=1μs
4
t=1ms IFSM
1
A
t=1s
0.5
Total power dissipation
Ptot
200
mW
Thermal resistance from junction to
soldering point
R th j-s
120
K/W
Junction temperature
Storage temperature
Tj
150
℃
Tstg
-65 to +150
℃
H002
Rev.A
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