3JH45 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)

RATINGS AND CHARACTERISTIC CURVES
3JH45
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
-1.0A
SETTIMEBASEFOR50/100 ns /cm
1cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
4
3
2
Single Phase
Half Wave 60HZ
Resistive or
1
Inductive Load
0
0
25
50
75
100
125 150
300
250
200
150
100
50
1
TJ=125
8.3ms Single Half
Sine-Wave
10
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
FIG.5-- TYPICAL JUNCTION CAPACITANCE
100
10
TJ=25
Pulse Width=300µS
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
200
100
60
40
20
10
6
4
TJ=25
2
f=1MHz
1
0.1 0.2 0.4 1 2 4 10 20 40 100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
Document Number 0261032
BLGALAXY ELECTRICAL
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2.