3JH45 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)

BL ^{GALAXY ELECTRICAL}
FAST RECOVERY RECTIFIER
3JH45
VOLTAGE RANGE: 600 V
CURRENT: 3.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar solvents
The plastic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 gram s
Mounting pos ition: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
V_RRM
V_RMS
V_DC
I_{F (AV)}
8.3ms single half -sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 3.0 A
I_{F SM}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
3JH45
600
420
600
3.0
200.0
1.3
10.0
100.0
250
32
22
- 55---- +150
- 55---- +150
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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Document Number 0261032
BLGALAXY ELECTRICAL
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