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| 3DD13003 Datasheet, PDF (2/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR ( NPN ) | |||
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Production specification
High Voltage Fast Switching NPN Power Transistor
3DD13003
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0
600
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
9
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=600V,IE=0
ICEO
VCB=400V,IE=0
IEBO
VEB=9V,IC=0
hFE
VCE=5V,IC=0.2A
15
100 μA
100 μA
100 μA
30
Ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
storage time
hFE1/
hFE2
VCE(sat)
VBE(sat)
ts
hFE1: VCE=5V,IC=5mA
hFE2: VCE=5V,IC=0.2A
IC=0.5A, IB= 0.1A
IC=0.5A, IB= 0.1A
0.75 0.9
0.4 0.8 V
1
1.5 V
5
μs
rise time
tr
UI9600ï¼IC=0.1A
1
μs
fall time
Transition frequency
tf
VCE=10V, IC=0.1A,
fT
f=1MHz
5
1
μs
MHz
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Z001
Rev.A
www.gmicroelec.com
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