3DD13003 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR ( NPN )

Production specification
High Voltage Fast Switching NPN Power Transistor
3DD13003
FEATURES
z P_C=1W(Mounted on ceramic substrate).
z High speed switching.
z Die size:1.34*1.34
z Small flat package.
Pb
Lead-free
APPLICATIONS
z Mainly used for compact electronic energy saving lamps,
electronic ballast and mobile phone chargers
power switch circuit
ORDERING INFORMATION
Type No.
Marking
3DD13003
13003
SOT-89S
Package Code
SOT-89S
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
600
V_CEO
Collector-Emitter Voltage
400
V_EBO
Emitter-Base Voltage
9
I_C
Collector Current -Continuous
1.3
P_C
Collector Dissipation
1
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
W
℃
Z001
Rev.A
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