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| 2SD1757 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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Production specification
Silicon Epitaxial Planar Transistor
2SD1757
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
30
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
15
V
Emitter-base breakdown voltage
V(BR)EBO IC=50μA,IC=0
6.5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.5 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
VEB=4V,IC=0
VCE=3V,IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC= 50mA
f=100MHz
0.5 μA
120
560
0.1 0.4 V
150
MHz
Output capacitance
Cob
VCB=5V,IE=0A,f=1MHz
15
pF
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
Range
120-270
180-390
270-560
Marking
AAQ
AAR
AAS
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
C156
Rev.A
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