2SD1757 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor
FEATURES
z Low V_CE(sat).(Typ.8mV at I_C/I_B=10/1mA).
z Optimal for muting.
z Power dissipation.P_D=200mW.
Pb
Lead-free
Production specification
2SD1757
APPLICATIONS
z Audio frequency general.
ORDERING INFORMATION
Type No.
Marking
2SD1757
AAQ/AAR/AAS
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
15
V_EBO
Emitter-Base Voltage
6.5
I_C
Collector Current -Continuous
500
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
C156
Rev.A
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