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| 2SD1005 Datasheet, PDF (2/3 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |||
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Production specification
NPN SILICON EPITAXIAL TRANSISTOR
2SD1005
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector cut-off current
ICBO
VCB=100V, IE=0
0.1 uA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 uA
Collector-emitter saturation voltage VCE(sat) IC/IB=500mA/50mA
0.15 0.5 V
Base-emitter saturation voltage
VBE(sat)
IC/IB=500mA/50mA
0.9 1.5 V
Base-emitter voltage
VBE
VCE=10V,IC=10mA
0.6 0.63 0.7 V
DC current gain(note)
VCE=2V, IC=100mA
hFE
VCE=2V, IC=500mA
90 200 400
25 80
Current gain bandwidth product
fT
VCE=5V,IE=10mA
160
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz ,IE=0A
12
pF
CLASSIFICATION OF hFE2
RANGE
90-180
135-270
200-400
MARKING
BW
BV
BU
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
E056
Rev.A
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