2SD1005 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
z High Collector to Base Voltage.
z Excellent DC Current Gain Linearity.
z Complements to PNP type 2SB804.
Pb
Lead-free
Production specification
2SD1005
ORDERING INFORMATION
Type No.
Marking
2SD1005
BW/BV/BU
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
100
V
80
V
5
V
1
A
500
mW
150
℃
-55 to +150
℃
E056
Rev.A
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