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| 2SC4226W Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor | |||
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC4226W
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Feed back capacitance
Transition frequency
Noise Figure
Symbol Test conditions
MIN
V(BR)CBO IC=100μA,IE=0
20
V(BR)CEO
IC=1mA,IB=0
12
V(BR)EBO
ICBO
IEBO
hFE
Cre
fT
NF
IE=100μA,IC=0
3
VCB=10V,IE=0
VEB=1V,IC=0
VCE=3V,IC=7mA
40
VCE=3V,IE=0mA,f=1MHz
VCE=3V, IE=7mA
3.0
VCE=3V,IC=7mA,f=1GHz
TYP MAX UNIT
V
V
V
1.0 μA
1.0 μA
110 250
0.7 1.5 pF
4.5
GHz
1.2 2.5 dB
CLASSIFICANTION OF hFE
Marking
hFE
r23
40-80
r24
70-140
r25
125-250
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Document number: BL/SSSTF042
Rev.A
www.galaxycn.com
2
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