2SC4226W Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Low noise.
z High gain.
z Power dissipation.(P_C=150mW)
Pb
Lead-free
2SC4226W
APPLICATIONS
z High frequency low noise amplifier.
ORDERING INFORMATION
Type No.
Marking
2SC4226W
r23/r24/r25
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
20
V_CEO
Collector-Emitter Voltage
12
V_EBO
Emitter-Base Voltage
3
I_C
Collector Current -Continuous
100
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-65~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF042
Rev.A
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