2SC4097W Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4097W
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=100μA,IE=0}
Collector-emitter breakdown
voltage
V_(BR)CEO I_C=1mA,I_B=0
Emitter-base breakdown voltage _{V(BR)EBO IE=100μA,IC=0}
Collector cut-off current
I_CBO
V_CB=20V,I_E=0
40
V
32
V
5
V
1 μA
Emitter cut-off current
I_EBO
DC current gain
h_FE
Collector-emitter saturation
voltage
V_CE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
CLASSIFICATION OF h_FE
Rank
P
Range
Marking
82-180
CP
V_EB=4V,I_C=0
1 μA
V_CE=3V,I_C=10mA
82
390
I_CE=100mA,I_B=10mA
V_CE=5V, I_C= 20mA,f=100MHz
V_CB=10V,I_E=0,f=1MHz
0.4 V
250
6
GHz
pF
Q
120-270
CQ
R
180-390
CR
Document number: BL/SSSTF003
Rev.A
www.galaxycn.com
2