2SC4097W Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Excellent h_FE linearity.
z Power dissipation:P_CM=200mW
Pb
Lead-free
Production specification
2SC4097W
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
2SC4097W
CP/CQ/CR
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
32
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
500
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF003
Rev.A
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