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| 2SC2411_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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Production specification
Silicon Epitaxial Planar Transistor
2SC2411
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol Test conditions
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
MIN TYP MAX UNIT
40
V
32
V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
1 μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
1 μA
DC current gain
Collector-emitter saturation
voltage
Collector output capacitance
Transition frequency
hFE
VCE=3V,IC=100mA 82
390
VCE(sat)
Cob
fT
IC=500mA, IB=50mA
VCB=10V,IE=0
f=1MHz
VCE=5V, IC= -20mA
f=100MHZ
0.4 V
6.0
pF
250
MHz
CLASSIFICATION OF hFE(1)
Rank
P
Range
82-180
Marking
CP
Q
120-270
CQ
R
180-390
CR
C097
Rev.A
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