2SC2411_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation: P_CM=200Mw.
z High I_CM(MAX.),I _CM(MAX.)=0.5mA.
z Low V_CE(sat)。
z Complements the 2SA1036.
Pb
Lead-free
2SC2411
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
2SC2411
CP/CQ/CR
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
40
32
5
500
200
-55 to+150
Units
V
V
V
mA
mW
℃
C097
Rev.A
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