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| 2SB1188 Datasheet, PDF (2/4 Pages) Rohm – Medium power Transistor(-32V, -2A) | |||
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Production specification
Medium power transistor(-32V,-2A)
2SB1188
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-50μA IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V IE=0
-1 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-1 μA
DC current gain
hFE
VCE=-3V IC=-0.5A
82
390
Collector-emitter saturation voltage
Transition frequency
Output Capacitance
VCE(sat)
fT
Cobo
IC=-2A IB=-0.2A
VCE=-5V,IC=-0.5A,
f=30MHz
VCB=-10V f=1.0MHz IE=0
-0.5 -0.8 V
100
MHz
50
pF
CLASSIFICATION HFE
Rank
Range
Marking
P
82-180
BCP
Q
120-270
BCQ
R
180-390
BCR
E036
Rev.A
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