2SB1188 Datasheet, PDF (1/4 Pages) Rohm – Medium power Transistor(-32V, -2A)

Production specification
Medium power transistor(-32V,-2A)
FEATURES
z Low V_CE(SAT)=-0.5V(Typ.)
(I_C/I_B=-2A/-0.2A).
z Complementary the 2SD1766.
Pb
Lead-free
2SB1188
APPLICATIONS
z Epitaxial planar type.
z PNP silicon transistor.
ORDERING INFORMATION
Type No.
Marking
2SB1188
BCP/BCQ/BCR
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –DC
-Pulse
Collector power dissipation
Junction and Storage Temperature
-40
V
-32
V
-5
V
-2
A
-3
500
mW
-55 to +150
℃
E036
Rev.A
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