BCP120T Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP120T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T_a = 25° C
SYMBOL
P_1dB
G_1dB
PAE
I_dss
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 8V, I_ds = 50%
I_dss)
Gain @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
PAE @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
Saturated Drain Current (V_gs = 0V, V_ds = 1.0V)
G_m
Transconductance (V_ds = 2V, V_gs = 50% I_dss)
V_p
Pinch-off Voltage (I_ds = 1.2 mA, V_ds = 2V)
BV_gd Drain Breakdown Voltage (I_gd = 0.8 mA, source open)
BV_gs
Source Breakdown Voltage (I_g = 0.8 mA, drain open)
R_th
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
29.0
11.0
240
-2.5
TYPICAL
30.0
30.0
12.0
9.0
50
45
360
480
-1.1
-15
-13
41
MAX.
480
-0.5
-12
UNIT
dBm
dB
%
mA
mS
V
V
V
°C/W
MAXIMUM RATING (T_a = 25° C)
SYMBOL
V_ds
V_gs
I_ds
I_gsf
P_in
T_ch
T_stg
P_t
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
I_dss
60 mA
29 dBm
175° C
-60° C - 150° C
4.9 W
CONTINUOUS
8V
-3 V
I_dss
10 mA
@ 3dB compression
150° C
-60° C - 150° C
4.1 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
www.berex.com
BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011