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BCP120T Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | |||
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BCP120T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
The BeRex BCP120T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1200 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP120T is produced using state of the art metallization with SI3N4 passivation and is screened to
assure reliability.
PRODUCT FEATURES
ï· 32 dBm Typical Output Power
ï· 11 dB Typical Gain @ 12 GHz
ï· 0.25 X 1200 Micron Recessed Gate
APPLICATIONS
ï· Commercial
ï· Military / Hi-Rel.
ï· Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
P1dB
G1dB
PARAMETER/TEST CONDITIONS
Output Power @ P1dB (Vds = 8V, Ids = 50%
Idss)
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
Idss
Saturated Drain Current (Vgs = 0V, Vds = 1.0 V)
Gm
Transconductance (Vds = 2V, Vgs = 50% Idss)
Vp
Pinch-off Voltage (Ids = 1.2 mA, Vds = 2V)
BVgd Drain Breakdown Voltage (Igd = 1.2 mA, source open)
BVgs
Source Breakdown Voltage (Ig = 1.2 mA, drain open)
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
31.0
10.0
240
-2.5
TYPICAL
32.0
32.0
11.0
8.0
60
55
360
480
-1.1
-15
-13
41
MAX.
480
-0.5
-12
UNIT
dBm
dB
%
mA
mS
V
V
V
°C/W
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
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