BCP060T_15 Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY pHEMT POWER FET CHIP

BCP060T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
50 Ohm Noise Figure (Vds=2V, Idss=15 mA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
MIN.
11.0
TYPICAL
27.5
27.0
12.5
9.5
55
50
1.34
MAX.
UNIT
dBm
dB
%
dB
MAXIMUM RATING (Ta = 25° C)
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
Idss
30 mA
25 dBm
175° C
-60° C - 150° C
2.6 W
CONTINUOUS
8V
-3 V
Idss
10 mA
@3dB Compression
150° C
-60° C - 150° C
2.2 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Vds= 8 V, Ids = 50% Idss (Tuned for Power)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015